Structure and Method to Use Active Surface of a Sensor

ABSTRACT

Disclosed is an apparatus and method of forming, including a supporting structure, a sensor on the supporting structure, a pair of columns on the supporting structure at opposite sides of the sensor, the pair of columns having a column height relative to a top surface of the supporting structure, the column height being higher than a height of the active surface of the sensor relative to the top surface of the supporting structure, and a lidding layer on the pair of columns and over the active surface, the lidding layer being supported at opposite ends by the pair of columns. The active surface of the sensor, the lidding layer and the pair of columns form an opening above at least more than about half of the active surface of the sensor, and the supporting structure, the sensor, the lidding layer and the pair of columns together form a flow cell.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application a continuation of US Pat. Application No. 16/626,126,filed Dec. 23, 2019, which is a 35 U.S.C. § 371 National Stage ofInternational Patent Application No. PCT/US2019/015690, filed Jan. 29,2019, which itself claims the benefit of and priority to U.S.Provisional Pat. Application Number 62/626,021, filed Feb. 3, 2018, thecontent of each of which is incorporated by reference herein in itsentirety and for all purposes.

BACKGROUND

Currently, lids of flow cells used with a sensor for on-chip detectionare supported above the active surface of the sensor by columns situatedon the active surface. The reason for putting the lid over the sensor isthe flatness and smoothness of active area (submicron roughness) oftenneeded to enable fluidic exchange to happen cleanly without entrainmentor trapping of reagents. The current structure leads to a reduction inthe area of the active surface that can be used for sensing. In somecases, only one-third (or less) of the active surface of the sensor isable to be used.

Therefore, there is a need for a way to use more of the active surfaceof a sensor.

SUMMARY

The shortcomings of pre-existing approaches may be overcome andadditional advantages are provided through the provision, in one aspect,of an apparatus. The apparatus comprises a supporting structure, asensor on the supporting structure, the sensor comprising an activesurface, a pair of columns, each column situated on the supportingstructure at opposite sides of the sensor, each of the pair of columnscomprising a column height relative to a top surface of the supportingstructure, the column height being higher than a height of the activesurface of the sensor relative to the top surface of the supportingstructure. The apparatus also includes a lidding layer on the pair ofcolumns and over the active surface of the sensor, the lidding layerbeing supported at opposite ends thereof by the pair of columns. Theactive surface of the sensor, the lidding layer and the pair of columnsform an opening above at least more than about half of the activesurface of the sensor, and the supporting structure, the sensor, thelidding layer and the pair of columns together form a flow cell.

In accordance with another aspect, a method is provided. The methodcomprises forming a flow cell, the forming comprising placing a sensoron a supporting structure, the sensor comprising an active surface,forming a pair of columns, each column at opposite sides of the sensor,each of the pair of columns comprising a column height relative to a topsurface of the supporting structure, the column height being higher thana height of the active surface of the sensor relative to the top surfaceof the supporting structure, and placing a lidding layer on top surfacesof the pair of columns, such that the lidding layer and the pair ofcolumns form a space above at least about half of the active surface ofthe sensor.

BRIEF DESCRIPTION OF THE DRAWINGS

These, and other objects, features and advantages of this disclosurewill become apparent from the following detailed description of thevarious aspects thereof taken in conjunction with the accompanyingdrawings, in which:

FIGS. 1-5 are cross-sectional views of one example of various stages offabricating the apparatus disclosed in the present disclosure.

FIG. 1 is a cross-sectional view of one example of a chip including adie with a sensor thereon, in accordance with one or more aspects of thepresent disclosure. The sensor includes, for example, an active surface.

FIG. 2 is a cross-sectional view of one example of prepping for andplacing of the sensor and die of FIG. 1 onto a supporting structure, inaccordance with one or more aspects of the present disclosure.

FIG. 3 is a cross-sectional view of one example of forming bottom columnportions adjacent either side of the die of FIG. 2 , in accordance withone or more aspects of the present disclosure.

FIG. 4 is a cross-sectional view of one example of forming top columnportions over the bottom column portions of FIG. 3 , in accordance withone or more aspects of the present disclosure.

FIG. 5 is a cross-sectional view of one example of an end structureafter placing a lidding layer on the top column portions, resulting in aspace above at least about half (in this case, all or nearly all) of theactive surface of the sensor, in accordance with one or more aspects ofthe present disclosure.

FIG. 6 is a flow diagram of one example of fabricating the apparatusdisclosed herein, in accordance with one or more aspects of the presentdisclosure.

DETAILED DESCRIPTION

Aspects of the present disclosure and certain features, advantages, anddetails thereof, are explained more fully below with reference to thenon-limiting examples illustrated in the accompanying drawings.Descriptions of well-known materials, fabrication tools, processingtechniques, etc., are omitted so as not to unnecessarily obscure therelevant details. It should be understood, however, that the detaileddescription and the specific examples, while indicating aspects of thedisclosure, are given by way of illustration only, and are not by way oflimitation. Various substitutions, modifications, additions, and/orarrangements, within the spirit and/or scope of the underlying inventiveconcepts will be apparent to those skilled in the art from thisdisclosure.

Approximating language, as used herein throughout the specification andclaims, may be applied to modify any quantitative representation thatmay permissibly vary without resulting in a change in the basic functionto which it is related. Accordingly, a value modified by a term orterms, such as “about” or “substantially,” is not limited to the precisevalue specified. In some instances, the approximating language maycorrespond to the precision of an instrument for measuring the value.

The terminology used herein is for the purpose of describing particularexamples only and is not intended to be limiting. As used herein, thesingular forms “a”, “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms “comprise” (and any form ofcomprise, such as “comprises” and “comprising”), “have” (and any form ofhave, such as “has” and “having”), “include (and any form of include,such as “includes” and “including”), and “contain” (and any form ofcontain, such as “contains” and “containing”) are open-ended linkingverbs. As a result, a method or device that “comprises,” “has,”“includes” or “contains” one or more steps or elements possesses thoseone or more steps or elements, but is not limited to possessing onlythose one or more steps or elements. Likewise, a step of a method or anelement of a device that “comprises,” “has,” “includes” or “contains”one or more features possesses those one or more features, but is notlimited to possessing only those one or more features. Furthermore, adevice or structure that is configured in a certain way is configured inat least that way, but may also be configured in ways that are notlisted.

As used herein, the term “connected,” when used to refer to two physicalelements, means a direct connection between the two physical elements.The term “coupled,” however, can mean a direct connection or aconnection through one or more intermediary elements.

As used herein, the terms “may” and “may be” indicate a possibility ofan occurrence within a set of circumstances; a possession of a specifiedproperty, characteristic or function; and/or qualify another verb byexpressing one or more of an ability, capability, or possibilityassociated with the qualified verb. Accordingly, usage of “may” and “maybe” indicates that a modified term is apparently appropriate, capable,or suitable for an indicated capacity, function, or usage, while takinginto account that in some circumstances the modified term may sometimesnot be appropriate, capable or suitable. For example, in somecircumstances, an event or capacity can be expected, while in othercircumstances the event or capacity cannot occur - this distinction iscaptured by the terms “may” and “may be.”

As used herein, unless otherwise specified, the approximating terms“about,” “substantially” and the like, used with a value, such asmeasurement, size, etc., means a possible variation of plus or minus tenpercent of the value.

As used herein, the terms “bond,” “bonded” and “bonding” refer to twothings being joined securely together using an adhesive or bonding agenttogether with a heat process or pressure. As used herein, the term“attach” refers to joining two things together, with or without the useof a fastener (e.g., screw, adhesive or bonding agent, etc.) Thus, theterm “bond” is a subset of the term “attach.”

Reference is made below to the drawings, which are not drawn to scalefor ease of understanding, wherein the same reference numbers are usedthroughout different figures to designate the same or similarcomponents.

The present disclosure provides examples related to apparatus allowingfor use of an entire active surface of a sensor and a method offabricating the apparatus.

FIGS. 1-5 are cross-sectional views of one example of various stages offabricating the apparatus disclosed in the present disclosure. Althoughthe present example includes planar sensor devices, it will beunderstood that non-planar devices may instead be used, or a combinationthereof.

FIG. 1 is a cross-sectional view of one example of a chip 100 includinga die 102 with sensor 104 thereon, in accordance with one or moreaspects of the present disclosure. The sensor includes, for example,active surface 105. As used herein, the term “active surface” refers toa surface or surface portion of a sensor where sensing actively takesplace. For example, the active surface of a digital image sensor is thesurface including the photosites or pixels for sensing light.Non-limiting examples of the function(s) of the sensor include, forexample, light sensing (e.g., having a predetermined range ofwavelengths sensed), detecting the presence of one or more substances(e.g., biological or chemical substance) and detecting a change inconcentration of something (e.g., ion concentration). The sensor mayinclude, for example, one or more semiconductor materials, and may takethe form of, for example, a Complementary Metal-Oxide Semiconductor(CMOS) sensor (e.g., a CMOS image sensor) or a Charge-Coupled Device(CCD), another type of image sensor. In the present example, a CMOSimage sensor is used, but other types of sensors may be used. As oneskilled in the art will know, the circuitry of a CMOS image sensorincludes passive electronic elements, such as a clock and timinggeneration circuit, an analog-to-digital converter, etc., as well as anarray of photodetectors to convert photons (light) to electrons, whichis then converted to a voltage. Where semiconductor based, the sensormay be fabricated on a silicon substrate (e.g., a silicon wafer), whichbecomes the die when cut from the silicon wafer. The thickness of thedie may depend on the size (diameter) of the silicon wafer. For example,a standard silicon wafer with a 51 mm diameter may have a thickness ofabout 275 microns, while a standard silicon wafer with a diameter of 300mm may have a thickness of about 775 microns. As used herein, the activearea of the sensor(s) refers to the sensor surface that will come intocontact with the reagent(s) for sensing. There may be more than onesensor on the die, and different sensors may be included on the samedie.

As one skilled in the art will understand, “CMOS” refers to a technologyused to fabricate integrated circuits. As used herein, “CMOS sensor” and“CMOS image sensor” refer to sensors fabricated using CMOS technology.The “complementary” aspect of the name refers to the inclusion of bothn-type and p-type metal-oxide semiconductor field effect transistors(MOSFETs) in integrated circuits (ICs) fabricated using CMOS technology.Each MOSFET has a metal gate with a gate dielectric, such as an oxide(hence, the “Metal-Oxide” part of the name) and a semiconductor materialbelow the gate (corresponds to “Semiconductor” in the name). ICs arefabricated on a die, which is a portion of a semiconductor substrate orwafer that is cut out after fabrication, and ICs fabricated using CMOStechnology are characterized by, for example, high noise immunity andlow static power consumption (one of the transistors is always off).

In one example, a CMOS image sensor may include, for example, millionsof photodetectors, also called pixels. Each pixel includes aphotosensor, which accumulates charge from the light, an amplifier toconvert the accumulated charge into a voltage, and a pixel-selectswitch. Each pixel may also include, for example, an individualmicrolens to capture more of the light, or have other enhancements toimprove the image such as, for example, noise reduction.

One example of the fabrication of a semiconductor device fabricatedusing CMOS technology will now be provided. Starting, for example, witha p-type semiconductor substrate, the NMOS region may be protected whilean n-type well is created in the PMOS region. This may be accomplishedusing, for example, one or more lithographic processes. A thin gateoxide and gate (e.g., polysilicon) may then be formed in both the NMOSand PMOS regions. N+ type dopant regions may be formed in the p-typesubstrate of the NMOS region on either side of the dummy gate (i.e., thesource and drain are formed), and one region of the n+ type dopant asthe body (here, the well) contact in the PMOS region. This may beaccomplished using, for example, a mask. The same process of masking anddoping may then be used to form the source and drain in the PMOS regionand the body contact in the NMOS region. Metallization to form theterminals to the various regions of the NMOS and PMOS transistors (i.e.,body, source, drain and gate) may then be performed. Unlike CCDs, CMOSimage sensors may include other circuits on the same chip at little tono extra cost, providing functions such as image stabilization and imagecompression on-chip.

FIG. 2 is a cross-sectional view of one example of preparation for andplacement of the die 102 and sensor 104 of FIG. 1 onto a supportingstructure 200, in accordance with one or more aspects of the presentdisclosure. In one example, the supporting structure 200 may take theform of a dielectric layer with one or more conductive pathways 202therethrough. In another example, the supporting structure may insteadtake the form of a dielectric layer alone. Non-limiting examples ofdielectric materials that may be used in the dielectric layer includelow-k dielectric materials (dielectric constant less than that ofsilicon dioxide, about 3.9), such as fluorine-doped silicon dioxide,carbon-doped silicon dioxide and porous silicon dioxide, and high-kdielectric materials (dielectric constant above about 3.9), such assilicon nitride (SiNx) and hafnium dioxide. The die may be attached tothe supporting structure using, for example, a die-attach adhesive thatmay provide, for example, low or ultra-low stress on the sensor and hightemperature stability.

FIG. 3 is a cross-sectional view of one example of forming bottom columnportions 300 and 302 adjacent either side of the die 102 of FIG. 2 , inaccordance with one or more aspects of the present disclosure.Non-limiting examples of the material of the bottom column portionsinclude, for example, a filler material, such as an epoxy or a plasticmolding compound (e.g., phenolic hardeners, silicas, catalysts, pigmentsand mold release agents). During the formation of the bottom columnportions, the sensor may be protected with, for example, a removablefilm (e.g., silicon dioxide). Alternatively, the material of the bottomcolumn portions may be conformally deposited, then planarized down tothe sensor(s) or the bottom column portions may be formed, for example,using a direct deposition process. In one example of conformaldeposition and planarization, the epoxy may be blanketly deposited overthe structure, followed by a planarization process (e.g.,chemical-mechanical polishing (CMP)).

FIG. 4 is a cross-sectional view of one example of forming top columnportions 400 and 402 over the bottom column portions 300 and 302 of FIG.3 , in accordance with one or more aspects of the present disclosure.Non-limiting examples of the material of the top column portionsinclude, for example, a filler material, such as an epoxy or a plasticmolding compound as described above with respect to the bottom columnportions. During the formation of the top column portions, the sensorand die may be protected with, for example, an easily removable film(e.g., silicon dioxide) without damage to the sensor. Alternatively, thematerial of the top column portions may be conformally deposited, thenplanarized down to the sensor(s). Also, although the columns each hadtwo portions in this example, it will be understood that the columns mayeach instead be one continuous column or the columns may instead havemore than two portions.

FIG. 5 is a cross-sectional view of one example of an end structure 500(in this case, a flow cell) after placing lidding layer 502 on topcolumn portions 400 and 402, in accordance with one or more aspects ofthe present disclosure. As used herein, the term “flow cell” refers to asmall chamber with inlet(s) and outlet(s) for fluids under test on asubstrate (e.g., glass), which may include channels that may bepatterned with a multitude (there may be billions) of nanowells at fixedlocations. The channels and nanowells on the substrate may be fabricatedusing, for example, semiconductor manufacturing technology, for example,the nanowells may be etched into the substrate. A sensor may be situatedadjacent the chamber, for example, under the substrate, for localizedsensing of various types of reactions, which may also be observable,with the fluids under test (e.g., fluorescence using an image sensor).

Continuing with FIG. 5 , the placement of the lidding layer may beaccomplished using, for example, relatively precise robotic machines(also known as pick-and-place machines), resulting in a space 504 overat least more than about half (in the example of FIG. 5 the space coversall or nearly all) of the active surface 105 of the sensor 104. Theplacement of the columns on opposite sides of the sensor, rather thanthe columns being on the active surface of the sensor may be referred toas a fan-out packaging process. The lidding layer may include materialsthat are unreactive with and transparent to incoming light or otherwaves that may trigger a sensing action from sensor 104. Non-limitingexamples of materials of the lidding layer with low autofluorescence orbeing non-fluorescent include glass, for example, aluminosilicate glassor flat panel display glass (for example, “eagle” glass, available fromCorning, Incorporated, Corning, New York). The material having low or noautofluorescence ensures being able to view, for example, anyfluorescent reaction in the flow cell. Substance(s), for example,biological or chemical substances(s), may be introduced into the spacefor on-chip sensing by the active surface of the sensor.

In one example, the active surface of the sensor has a uniform lowroughness, i.e., the active surface is as smooth as possible.Optionally, multiple channels 506 for liquid(s) may be present in asecondary layer over the sensor in the space. The optional secondarylayer may include, for example, glass as described above, on the sensorsurface. Such a secondary layer may have a roughness about equal to thatof the active surface of the sensor and a seamless interface with theactive surface to enable fluidic exchange without entrainment orentrapment of the fluid(s).

One example of a process 600 of fabricating the apparatus of the presentdisclosure will now be described with respect to the flow diagram ofFIG. 6 . Fabrication of one example of the sensor 602 is described abovewith respect to FIG. 1 . Although that example relates to a CMOS imagesensor, other types of active-pixel sensors may be used, for example,charge-coupled devices (CCDs) and other technologies, such as, forexample, NMOS image sensor technology (also known as live MOS sensors)and image sensors with various color filters, e.g., microcolorsplitters, which differ from the Bayer Color Filter Array (an array oftiny microfilters) in that they diffract light so that variouscombinations of wave lengths (colors) hit different photosites. A LiveMOS Sensor offers image quality comparable to a Full Frame Transfer(FFT) CCD sensor with the low power needs of a CMOS sensor, and isnoteworthy for its high-quality imaging capabilities over an extendedperiod of time. Simplified circuitry that reduces the distance from eachphotodiode to its corresponding on-chip microlens (making for a denser,higher resolution sensor) assures excellent sensitivity and imagequality even when light strikes it at a high angle of incidence.Alternatively, a preexisting or “off the shelf” sensor may be usedinstead of fabricating one.

Placement of the die and sensor 604 may include preparation, which mayinclude, for example, lithographic and plating processes, and placementmay be accomplished using, for example, precise robotic machines (alsoknown as pick-and-place machines). Panelization 606 is then performed tojoin the sensor chip and the supporting layer. Panelization may include,for example, carrier lamination, attaching the sensor to a die,positioning the die on the supporting layer and fixing with a moldingcompound, planarization (or “top grind”) of the molding compound andbackside film lamination. Following panelization, a fan-out process 608is performed to maximize use of the active surface of the sensor. Inother words, forming the open space with the columns situated onopposite sides of the sensor, versus on the sensor, as described in moredetail above, using, for example, lithography and plating processes,then a lidding layer may be placed on the columns using, for example, asurface mount process 610. In the surface mount process, the liddinglayer is positioned on the columns using, for example, the preciserobotic machines described above, and attached in some manner (e.g.,using epoxy). Such machines may be used to place surface-mount devicesonto a printed circuit board or similar. Such machines may use, forexample, pneumatic suction cups manipulated in three dimensions toeffect placement of the lidding layer.

Other ways to maximize use of the active surface of the sensor include,for example, designing and using a sensor with an active surface that isoutside the area of the lid. Another example of increasing the useablearea of the active surface of the sensor includes reconstituting thesensor into a lower-cost composite wafer, for example, plastic, using,for example, overmolding or gate molding processes.

In a first aspect, disclosed above is an apparatus. The apparatusincludes a supporting structure, a sensor on the supporting structure,the sensor including an active surface. The apparatus further includes apair of columns, each column situated on the supporting structure atopposite sides of the sensor, each of the pair of columns comprising acolumn height relative to a top surface of the supporting structure, thecolumn height being higher than a height of the active surface of thesensor relative to the same top surface of the supporting structure, anda lidding layer on the pair of columns and over the active surface, thelidding layer being supported at opposite ends thereof by the pair ofcolumns. The active surface of the sensor, the lidding layer and thepair of columns together form an opening above at least more than abouthalf of the active surface of the sensor, and the supporting structure,the sensor, the lidding layer and the pair of columns together form aflow cell.

In one example, each of the pair of columns may include, for example, abottom column portion at the opposite sides of the sensor, and a topcolumn portion, which may be the same as or different than thematerial(s) of the bottom column portion, over the bottom columnportion. In one example, the pair of columns may each include, forexample, a filler material(s). The filler material(s) may include, forexample, one of an epoxy and a plastic molding compound.

In one example, the lidding layer in the apparatus of the first aspectmay include, for example, glass, e.g., at least one of aluminosilicateglass and flat panel display glass.

In one example, the supporting structure of the apparatus of the firstaspect may include, for example, dielectric layer(s), and the dielectriclayer(s) may include one or more conductive pathways therein.

In one example, the sensor in the apparatus of the first aspect mayinclude, for example, one or more semiconductor materials, such as, forexample, a sensor fabricated using CMOS technology (e.g., a CMOS imagesensor, as described above).

In one example, a secondary layer on the active surface of the sensor inthe apparatus of the first aspect may include, for example, channels.

In one example, the apparatus of the first aspect may, for example, bepart of a cartridge for at least one of biological analysis and chemicalanalysis. Such a cartridge may be used to enable sequencing, forexample, DNA sequencing, e.g., sequencing-by-synthesis ornext-generation sequencing (also known as high-throughput sequencing).Such a cartridge may instead be used to enable genotyping, whichinvolves determining differences in the genetic make-up (genotype) of anindividual by examining the individual’s DNA sequence using biologicalassays and comparing it to another individual’s sequence or a referencesequence.

In a second aspect, disclosed above is a method. The method includesforming a flow cell, the forming including placing a sensor on asupporting structure, the sensor including an active surface, forming apair of columns, each column at opposite sides of the sensor, each ofthe pair of columns comprising a column height relative to a top surfaceof the supporting structure, the column height being higher than aheight of the active surface of the sensor relative to the top surfaceof the supporting structure, and placing a lidding layer on top surfacesof the pair of columns, such that the lidding layer and the pair ofcolumns form a space above at least about half of the active surface ofthe sensor.

In one example, placing the sensor may include, for example, placing asensor fabricated using CMOS technology (e.g., a CMOS image sensor, asdescribed above).

In one example, forming the pair of columns in the method of the secondaspect may include, for example, forming a bottom column portion at theopposite sides of the sensor, and forming a top column portion over eachbottom column portion.

In one example, the supporting structure in the method of the secondaspect may include, for example, dielectric layer(s), and the dielectriclayer(s) may include conductive pathway(s) therein.

In one example, the method of the second aspect may further include, forexample, coupling the flow cell and a cartridge for at least one ofbiological analysis and chemical analysis.

In one example, the method of the second aspect may further include, forexample, using the flow cell for sequencing.

In one example, the method of the second aspect may further include, forexample, using the flow cell for genotyping.

In one example, the pair of columns in the method of the second aspectmay include, for example, filler material(s).

In one example, the filler material(s) in the method of the secondaspect may include, for example, at least one of an epoxy and a plasticmolding compound.

While several aspects of the present disclosure have been described anddepicted herein, alternative aspects may be effected by those skilled inthe art to accomplish the same objectives. Accordingly, it is intendedby the appended claims to cover all such alternative aspects.

It should be appreciated that all combinations of the foregoing concepts(provided such concepts are not mutually inconsistent) are contemplatedas being part of the inventive subject matter disclosed herein. Inparticular, all combinations of claimed subject matter appearing at theend of this disclosure are contemplated as being part of the inventivesubject matter disclosed herein.

1. An apparatus, comprising: a supporting surface; a sensor having anactive surface and positioned on the supporting surface; sides extendingfrom the supporting surface; a layer on the sides and covering theactive surface; and a secondary layer over the sensor and comprising aplurality of channels; wherein the active surface is positioned beneaththe channels and wherein the sides are outwardly spaced from the activesurface.
 2. The apparatus of claim 1, wherein the secondary layer ispatterned.
 3. The apparatus of claim 2, wherein the secondary layer ispatterned with a plurality of nanowells.
 4. The apparatus of claim 3,wherein the nanowells form at least a portion of each of the channels.5. The apparatus of claim 3, wherein each channel of the secondary layerhas an inlet and an outlet.
 6. The apparatus of claim 1, wherein thesensor comprises a complementary metal-oxide semiconductor (CMOS)sensor, a Charge-Coupled Device (CCD), or an N-channel metal-oxidesemiconductor (NMOS) sensor.
 7. The apparatus of claim 1, wherein thesides are not positioned on the active surface.
 8. The apparatus ofclaim 1, wherein the secondary layer has a roughness about equal to aroughness of the active surface of the sensor.
 9. An apparatus for atleast one of biological analysis and chemical analysis, the apparatuscomprising; a flow cell, comprising; a supporting surface; a sensorhaving an active surface and positioned on the supporting surface; sidesextending from the supporting surface; a layer on the sides and coveringthe active surface, the channels positioned between the layer and theactive surface; and a secondary layer over the sensor and comprising aplurality of channels, each channel having an inlet and an outlet;wherein the active surface is positioned beneath the channels andwherein the sides are outwardly spaced from the active surface.
 10. Theapparatus of claim 9, wherein the supporting structure comprises one ormore dielectric layers each comprising one or more conductive pathwaystherein.
 11. The apparatus of claim 9, wherein the sides comprisecolumns.
 12. The apparatus of claim 9, wherein the sides comprise epoxyor molding compound and the layer comprises glass.
 13. A method,comprising: fabricating a sensor having an active surface, positioning asecondary layer over the sensor, the secondary layer comprising aplurality of channels, each channel having an inlet and an outlet;placing the sensor on a supporting surface; joining the sensor and thesupporting surface using a panelization process, the panelizationprocess comprising fixing the sensor to the supporting surface using afiller material; forming an opening and sides extending from thesupporting surface using a fan-out process, the sides being outwardlyspaced from the active surface; and placing a layer on the sides andcovering the active surface to form a flow cell, the channels positionedbetween the layer and the active surface.
 14. The method of claim 13,further comprising attaching the layer to the sides.
 15. The method ofclaim 14, wherein attaching the layer to the sides comprises usingepoxy.
 16. The method of claim 14, further comprising placing a film onthe sensor when forming the opening and the sides.
 17. The method ofclaim 14, wherein forming the sensor comprises forming a complementarymetal-oxide semiconductor (CMOS) sensor, a Charge-Coupled Device (CCD),or an N-channel metal-oxide semiconductor (NMOS) sensor.
 18. The methodof claim 14, wherein placing the sensor on the supporting surfacecomprises preparing the sensor using lithographic and plating processesand placing the sensor on the supporting surface comprises using apick-and-place machine.
 19. The method of claim 14, wherein the fillermaterial comprises adhesive, epoxy, or a molding compound.
 20. Themethod of claim 14, further comprising coupling the flow cell and acartridge for at least one of biological analysis and chemical analysis.